4841 Davenport Place, Fremont, CA 94538

Molecular Beam Epitaxy

Molecular Beam Epitaxy: Nitride MBE systems
Oxide MBE systems
III-V, II-VI MBE systems
Silicon MBE systems
Metal Organic systems
Laser MBE systems
Cleaving systems
Integrate SPM/XPS/UPS

MBE applies to the growth of semiconductor film and multilayer structure. Growth rate from 1um/hr (1 monolayer/s) is low enough surface migration of the impinging species on the growing surface ensured. Consequently, the surface of the film is very smooth. The precise control of the beam flux and growth conditions produces the highest quality film compared to other methods.